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Death On April 14, 2011, Garcia died at her home in Houston, Texas. Partial filmography References External links Category:1930 births Category:2011 deaths Category:Actresses from El Paso, Texas Category:American film actresses Category:American television actresses Category:20th-century American actresses Category:21st-century American actresses Category:American women film directors Category:Women television directorsThe present invention relates to a method for fabricating a semiconductor integrated circuit having a capacitor formed in an inter-layer insulating film. There is a growing tendency of reduction of the area of the memory cell of an DRAM in order to enhance the degree of integration. On the other hand, the capacitor is required to secure a certain amount of capacitance even if the area thereof is reduced. As a structure for increasing the capacitance of the capacitor, there is a method for reducing the thickness of an insulating film formed between the storage electrodes. However, if the insulating film formed between the storage electrodes is thin, the resistance between the storage electrode and the diffusion layer will increase. This leads to an undesirable result in that the capacitor will deteriorate the refresh characteristics. In addition, if the insulating film formed between the storage electrodes is thin, a leak current will increase between the storage electrodes, which in turn deteriorates the data storage characteristics of the capacitor. It is, therefore, necessary to secure the amount of capacitance by reducing the area of the capacitor without reduction of the area of the capacitor electrode. In accordance with one of the preferred embodiments of the present invention, there is provided a method for fabricating a semiconductor integrated circuit including the steps of forming a capacitor electrode on a gate insulating film formed on a semiconductor substrate having a source and drain diffusion layers formed therein, forming a mask insulating film on the capacitor electrode and the gate insulating film, forming a concave portion on a portion of the capacitor electrode exposed by the mask insulating film by anisotropic etching of the mask insulating film, forming a poly-crystalline silicon film on the concave portion of the capacitor electrode and the gate insulating film, and forming a poly-crystalline silicon film pattern in the concave portion of the capacitor electrode by performing thermal oxidation of the poly-crystalline silicon film. In accordance with another preferred embodiment of the present invention, there is provided

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